, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB855 description ? collector current: lc= -2a ? low collector saturation voltage :vce(satr~1.2v(max)@lc=-2a ? high collector power dissipation applications ? designed for low frequency power amplifier applications. absolute maximum ratings(ta=25'c) symbol vgbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous total power dissipation @ tc=25'c junction temperature storage temperature range value -50 -50 -4 -2 20 150 -45-150 unit v v v a w ?c c . ^ 2 pih: 1 base 1 2 collector ^ '? 3 emitter 2 3 to-z20c package ? a t t * b p. ?* v h ^yi -:? h ' ' \ t h t c 4 j dilv a b c d f g h j k l 0 r s u v ? mm min 15.50 9.90 4.20 0.70 3.40 4.98 2 68 0.44 13. 00 1.10 2.70 z.30 1.29 6.45 8.66 max 15.90 10.20 450 0.90 3.70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1,35 6.65 8.86 ?-s ?[* j n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions uithout notice. information furnished hy n,l semi-condiielors is believed to be both accurate and reliable at the time of uoiii to press. i kmever. n.i senii-c'ondiietors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encouraiies customers in verify thai datasheets are current before placing orders. quality -semi-conductors
silicon pnp power transistor 2SB855 electrical characteristics tc=25t: unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vbe(on) icbo hpe-1 flfe-2 fr parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc= -30ma ; rbe= lc= -5ma ; ie= 0 ie= -5ma; lc= 0 lc= -2a; ib= -0.2a lc= -1a; vce= -4v vcb= -20v; ie= 0 lc= -1a; vce= -4v lc=-0.1a;vce=-4v lc= -0.5a; vce= -4v min -50 -50 -4 35 35 typ. 35 max -1.2 -1.5 -100 200 unit v v v v v ua mhz ? h.fe-1 classifications a 35-70 b 60-120 c 100-200
|
